NTJD4401NT1 ON Semiconductor, NTJD4401NT1 Datasheet
NTJD4401NT1
Specifications of NTJD4401NT1
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NTJD4401NT1 Summary of contents
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NTJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features • Small Footprint ( mm) • Low Gate Charge N-Channel Device • ESD Protected Gate • Same Package as SC-70 (6 Leads) • Pb-Free Packages are ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage V Temperature Coefficient Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance CHARGES AND ...
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TYPICAL PERFORMANCE CURVES 0.8 0.6 0.4 0 DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1. On-Region Characteristics 0.7 V ...
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... TOTAL GATE CHARGE (nC) g Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge ORDERING INFORMATION Device NTJD4401NT1 NTJD4401NT1G NTJD4401NT2 NTJD4401NT2G NTJD4401NT4 NTJD4401NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
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... Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...