MMDF1N05ER2G ON Semiconductor, MMDF1N05ER2G Datasheet - Page 3

• Manufacturer Part Number: MMDF1N05ER2G
• Description: MOSFET N-CHAN DUAL 2A 50V 8SOIC
• Manufacturer: ON Semiconductor

Specifications of MMDF1N05ER2G

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 330pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Module Configuration: Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 50V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMDF1N05ER2GOS

0.5
0.4
0.3
0.2
0.1
10
0.5
0.4
0.3
0.2
0.1
8
6
4
2
0
0
0
0
0
2
Figure 3. On−Resistance versus Drain Current
10 V
Figure 1. On−Region Characteristics
3
V
6 V
DS
Figure 5. On Resistance versus
2
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
2
8 V
4
Gate−To−Source Voltage
I
T
D
J
, DRAIN CURRENT (AMPS)
, JUNCTION TEMPERATURE
5
4
4
6
TYPICAL ELECTRICAL CHARACTERISTICS
T
6
J
= 25°C
7
I
V
D
GS
= 1.5 A
6
8
= 0
V
8
V
GS
100°C
4.5 V
−55°C
GS
25°C
5 V
4 V
= 3.5 V
= 10 V
9
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MMDF1N05E
10
8
10
3
1.2
1.1
0.9
0.8
0.7
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
10
Figure 4. On−Resistance Variation with Temperature
1
−50
4
1
0
8
6
2
0
−50
0
Figure 6. Gate Threshold Voltage Variation
−25
−25
V
V
I
D
1
DS
GS
= 1.5 A
Figure 2. Transfer Characteristics
≥ 10 V
V
= 10 V
100°C
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
T
2
T
0
0
J
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
25°C
with Temperature
25
25
3
−55 °C
−55 °C
50
50
4
V
I
D
DS
= 1 mA
75
100°C
75
= V
5
GS
25°C
100
100
6
125
125
7
150
150
8