NTHD4401PT3 ON Semiconductor, NTHD4401PT3 Datasheet
NTHD4401PT3
Specifications of NTHD4401PT3
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NTHD4401PT3 Summary of contents
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NTHD4401P Power MOSFET −20 V, −3.0 A, Dual P−Channel, ChipFETt Features • Low R and Fast Switching Speed in a ChipFET Package DS(on) • Leadless ChipFET Package 40% Smaller Footprint than TSOP−6 • ChipFET Package with Excellent Thermal Capabilities where ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Tem- perature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...
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TYPICAL PERFORMANCE CURVES − − −2 −2 −1 −1 −1.4 V −1 −V , DRAIN−TO−SOURCE ...
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TYPICAL PERFORMANCE CURVES 10000 150°C J 1000 T = 100°C J 100 −V , DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 7. Drain−to−Source Leakage Current vs. Voltage 6 ...
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... SCALE 20:1 0.026 Figure 13. Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. The basic pad layout with dimensions is shown in Figure 13. This is sufficient for low power dissipation MOSFET ...
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... N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. ...