NTJD4105CT4 ON Semiconductor, NTJD4105CT4 Datasheet - Page 5

• Manufacturer Part Number: NTJD4105CT4
• Description: MOSFET N/P-CHAN COMPL SOT-363
• Manufacturer: ON Semiconductor

Specifications of NTJD4105CT4

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V
• Drain To Source Voltage (vdss): 20V, 8V
• Current - Continuous Drain (id) @ 25° C: 630mA, 775mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 3nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 46pF @ 20V
• Power - Max: 270mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.5
0.4
0.3
0.2
0.1
1.4
1.2
0.8
0.6
0.4
0.2
0
1
0
0
0
1.6
1.4
1.2
0.8
0.6
−50
1
V
Figure 11. On−Resistance vs. Drain Current
GS
−V
I
V
and −2.5 V
= −4.5 V
0.2
D
Figure 9. On−Region Characteristics
DS
GS
−25
= −0.7 A
Figure 13. On−Resistance Variation with
−2 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −4.5 V
V
TYPICAL P−CHANNEL PERFORMANCE CURVES
V
−I
GS
GS
2
0.4
T
D,
J
= −4.5 V to −2.6 V
= −2.2 V
, JUNCTION TEMPERATURE (°C)
DRAIN CURRENT (AMPS)
0
and Temperature
0.6
25
T
T
T
J
J
J
Temperature
= 125°C
= 25°C
= −55°C
4
50
0.8
75
1
6
100
T
1.2
J
= 25°C
−1.8 V
−1.4 V
−1.2 V
−1.6 V
http://onsemi.com
125
1.4
8
150
5
300
240
180
120
1.4
1.2
0.8
0.6
0.4
0.2
0.5
0.4
0.3
0.2
0.1
60
1
0
0
0
−8
0
0
V
V
DS
Figure 12. On−Resistance vs. Drain Current
GS
≥ −10 V
−V
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
(T
= −2.5 V
0.2
0.4
GS
J
Figure 10. Transfer Characteristics
= 25°C unless otherwise noted)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 14. Capacitance Variation
−I
−6
0.4
D,
DRAIN CURRENT (AMPS)
0.8
and Temperature
VOLTAGE (VOLTS)
25°C
T
T
T
T
0.6
J
J
J
J
= 125°C
= 125°C
= 25°C
= −55°C
1.2
−4
0.8
T
J
1.6
= −55°C
1
C
−2
iss
T
V
J
C
GS
2
1.2
= 25°C
oss
C
rss
= 0 V
2.4
1.4
0