NTMD2C02R2SG ON Semiconductor, NTMD2C02R2SG Datasheet
NTMD2C02R2SG
Specifications of NTMD2C02R2SG
Related parts for NTMD2C02R2SG
NTMD2C02R2SG Summary of contents
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... NTMD2C02R2G T 260 °C L NTMD2C02R2SG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc 250 mAdc Zero Gate Voltage Drain Current ( Vdc Vdc Vdc ...
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ELECTRICAL CHARACTERISTICS − continued Characteristic SOURCE−DRAIN DIODE CHARACTERISTICS (T Forward Voltage (Note Reverse Recovery Time Reverse Recovery Stored Charge 6. Negative signs for P−Channel device omitted for clarity. 7. Pulse Test: Pulse Width ≤ 300 ...
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TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 0.07 0.06 0.05 0.04 0.03 0.02 0. GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 5. On−Resistance versus Gate−To−Source Voltage 0. 25° 0.03 ...
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TYPICAL ELECTRICAL CHARACTERISTICS N−Channel 1000 125°C J 100 100° 25°C 0.1 0. DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Drain−To−Source Leakage Current versus Voltage Switching behavior is ...
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N−Channel 2500 2000 C iss 1500 C rss 1000 500 C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 13. Capacitance Variation ...
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... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...
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The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...
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TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E−05 1.0E−04 1.0E− Figure 25. Diode Reverse Recovery Waveform Normalized to qja at 10s. 0.0175 W 0.0710 W Chip 0.0154 ...
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INFORMATION FOR USING THE SOIC−8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...
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For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings ...
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... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniMOS is a trademark of Semiconductor Components Industries, LLC (SCILLC). Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...