2N7002-7-F Diodes Inc, 2N7002-7-F Datasheet - Page 2
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2N7002-7-F
Manufacturer Part Number
2N7002-7-F
Description
MOSFET N-CH 60V 115MA SOT23-3
Manufacturer
Diodes Inc
Datasheet
1.2N7002-7-F.pdf
(5 pages)
Specifications of 2N7002-7-F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.5 Ohm @ 50mA, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
115mA
Vgs(th) (max) @ Id
2.5V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
7.5 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
0.08 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.115 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
800mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
13.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Dc
1034
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2N7002-FDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7002-7-F
Manufacturer:
DIO
Quantity:
137 700
Company:
Part Number:
2N7002-7-F
Manufacturer:
DIODES
Quantity:
3 000
Company:
Part Number:
2N7002-7-F
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
2N7002-7-F
Manufacturer:
DIODESINC
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current (Note 4)
Total Power Dissipation (Note 4)
Derating above T
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Diode Forward Voltage (Note 6)
Continuous Source Current (Note 6)
Pulse Source Current (Note 6)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
2N7002
Document number: DS11303 Rev. 24 - 2
4. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
5. Short duration pulse test used to minimize self-heating effect.
6. V
website at http://www.diodes.com/datasheets/ap02001.pdf.
SD
measured in 250μs pulse, duty cycle = 2%; I
A
= 25°C
GS
≤ 1.0MΩ
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
Continuous @ 100°C
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
@ T
@ T
@ T
@ T
Continuous
Continuous
SD
C
J
C
J
= 125°C
= 125°C
= 25°C
= 25°C
measure in 10ms Repetitive Pulse, duty cycle = 2% , Pd_Pulse is from Zth test data
Pulsed
Pulsed
www.diodes.com
Symbol
R
2 of 5
BV
V
t
I
t
D(OFF)
DS (ON)
I
I
D(ON)
C
D(ON)
V
C
C
GS(th)
g
DSS
GSS
I
I
SD
FS
SD
oss
DSS
S
iss
rss
Symbol
Symbol
T
V
J,
V
V
R
P
DSS
DGR
GSS
I
T
θ JA
D
D
STG
Min
1.0
0.5
60
80
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.78
Typ
3.2
4.4
1.0
2.0
7.0
70
22
11
11
⎯
⎯
⎯
⎯
⎯
⎯
-55 to +150
Max
13.5
500
±10
200
1.0
2.5
7.5
5.0
1.5
50
25
20
20
⎯
⎯
⎯
Value
Value
2
±20
±40
115
800
300
417
2.4
60
60
73
Unit
mS
mA
µA
nA
pF
pF
pF
ns
ns
Ω
V
V
A
V
A
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
R
GS
DS
GS
DS
GS
GS
GS
DS
GS
DS
DD
L
GEN
= 150Ω, V
Test Condition
= 60V, V
= V
=10V, I
= 30V, I
= 0V, I
= ±20V, V
= 5.0V, I
= 10V, I
= 10V, V
= 0V, I
= 25V, V
= 25Ω
GS
© Diodes Incorporated
mW/°C
November 2010
Units
Units
°C/W
mW
mA
, I
°C
2N7002
D
S
⎯
⎯
V
V
V
D
D
D
D
= 115mA
= 10μA
D
GS
DS
GS
GEN
= 0.2A
= 250μA
= 0.5A
= 0.2A,
DS
= 0.05A
= 0V
= 7.5V
= 0V
= 0V
= 10V,