ZXMN2F30FHTA Diodes Zetex, ZXMN2F30FHTA Datasheet - Page 4

• Manufacturer Part Number: ZXMN2F30FHTA
• Description: MOSFET N-CHAN 20V SOT23-3
• Manufacturer: Diodes Zetex
• Type: Power MOSFETr

Specifications of ZXMN2F30FHTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 2.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 452pF @ 10V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Continuous Drain Current: 4.9A
• Power Dissipation: 1.4W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN2F30FHTR

Electrical characteristics (at T
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤2%.
(†) For design aid only, not subject to production testing.
(‡) Switching characteristics are independent of operating junction temperature.
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
NOTES:
Parameter
Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source
On-State Resistance
Forward
Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Switching
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode
Diode Forward Voltage
(†)
(‡)(†)
(*)(†)
(*)
(*)
V
I
V
R
g
C
C
C
t
t
t
Q
V
Symbol
I
t
Q
Q
DSS
GSS
d(on)
r
d(off)
f
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
amb
Min.
0.6
= 25°C unless otherwise stated)
20
4
Typ.
19.4
10.2
0.75
452
102
0.9
8.6
2.9
5.6
4.8
1.2
58
1
0.045
0.065
Max.
100
1.5
1.2
1
Unit
nA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
S
V
ZXMN2F30FH
I
V
V
I
V
V
V
V
f=1MHz
V
I
R
V
I
I
Conditions
D
D
D
D
S
DS
GS
GS
GS
DS
DS
DD
G
DS
= 1.25A, V
= 250µA, V
= 250µA, V
= 1A
= 3.5A
≈ 6.0Ω
= 20V, V
= 10V, I
= 10V, V
= 10V, V
=±12V, V
= 4.5V, I
= 2.5V, I
= 10V, V
www.zetex.com
D
D
D
GS
GS
GS
GS
GS
= 3A
GS
DS
DS
= 2.5A
= 2.0A
=0V
=0V
= 4.5V
=0V
= 4.5V
=0V
=V
=0V
GS