DMN4036LK3-13 Diodes Zetex, DMN4036LK3-13 Datasheet - Page 4

• Manufacturer Part Number: DMN4036LK3-13
• Description: MOSFET N-CH 40V 8.5A DPAK
• Manufacturer: Diodes Zetex

Specifications of DMN4036LK3-13

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 36 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 8.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 9.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 453pF @ 20V
• Power - Max: 2.12W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DMN4036LK3-13DITR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 8)
Forward Transconductance (Notes 8 & 9)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 9)
Reverse recovery charge (Note 9)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time (Note 10)
Notes:
DMN4036LK3
Document number: DS32122 Rev. 2 - 2
8. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
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Min
4 of 8
1.0
40
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0.026
0.049
19.6
0.96
79.1
40.5
11.7
11.6
Typ
112
926
453
4.9
9.2
1.7
2.7
3.2
9.5
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⎯
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0.036
0.061
±100
Max
0.5
3.0
1.1
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f = 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= 250μA, V
= 250μA, V
= 12A, V
= 12A, di/dt = 100A/μs
= 12A, R
= 40V, V
= ±20V, V
= 10V, I
= 4.5V, I
= 15V, I
= 20V, V
= 4.5V
= 10V
= 20V, V
Test Condition
DMN4036LK3
GS
G
D
D
D
≅ 6.0Ω
GS
GS
GS
GS
DS
= 12A
= 0V
= 12A
DS
= 6A
= 0V
= 0V
= 10V
= 0V
= V
= 0V
V
I
© Diodes Incorporated
D
DS
GS
= 12A
= 20V
March 2010