SI1470DH-T1-E3 Vishay, SI1470DH-T1-E3 Datasheet - Page 6
![MOSFET N-CH 30V 5.1A SC70-6](/photos/5/42/54224/sot-363_pkg_sml.jpg)
SI1470DH-T1-E3
Manufacturer Part Number
SI1470DH-T1-E3
Description
MOSFET N-CH 30V 5.1A SC70-6
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI1470DH-T1-E3.pdf
(7 pages)
Specifications of SI1470DH-T1-E3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
66 mOhm @ 3.8A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.1A
Vgs(th) (max) @ Id
1.6V @ 250µA
Gate Charge (qg) @ Vgs
7.5nC @ 5V
Input Capacitance (ciss) @ Vds
510pF @ 15V
Power - Max
2.8W
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.066 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.8 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
95mohm
Rds(on) Test Voltage Vgs
12V
Threshold Voltage Vgs Typ
1.6V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI1470DH-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1470DH-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
28 952
Company:
Part Number:
SI1470DH-T1-E3
Manufacturer:
VISHAY
Quantity:
2 970
Si1470DH
Vishay Siliconix
TYPICAL CHARACTERISTICS T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74277.
www.vishay.com
6
0.01
0.01
0.1
0.1
2
1
2
1
10
10
0.05
-4
-4
0.2
0.02
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
Single Pulse
Single Pulse
10
-3
10
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
A
= 25 °C, unless otherwise noted
10
-2
Square Wave Pulse Duration (s)
10
Square Wave Pulse Duration (s)
-2
10
-1
10
1
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
1
S10-0646-Rev. B, 22-Mar-10
= P
t
2
Document Number: 74277
DM
Z
thJA
thJA
100
t
t
1
2
(t)
= 100 °C/W
600
10