SI2302ADS-T1-E3 Vishay, SI2302ADS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2302ADS-T1-E3
• Description: MOSFET N-CH 20V 2.1A SOT23-3
• Manufacturer: Vishay

Specifications of SI2302ADS-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 1.2V @ 50µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.06 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 700 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 85mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2302ADS-T1-E3TR

TYPICAL CHARACTERISTICS T
Document Number: 71831
S10-0047-Rev. I, 11-Jan-10
0.15
0.12
0.09
0.06
0.03
0.00
10
5
4
3
2
1
0
8
6
4
2
0
0
0
0
V
I
D
DS
= 3.6 A
On-Resistance vs. Drain Current
= 10 V
1
1
2
V
V
DS
Output Characteristics
Q
GS
g
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
= 5 V thru 2.5 V
I
D
V
Gate Charge
- Drain Current (A)
GS
2
2
4
= 2.5 V
0 V, 0.5 V, 1 V
3
3
6
A
2 V
= 25 °C, unless otherwise noted
V
GS
4
4
8
= 4.5 V
1.5 V
10
5
5
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
V
I
D
GS
C
= 3.6 A
rss
0.5
= 4.5 V
4
V
V
GS
T
Transfer Characteristics
DS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
oss
25 °C
T
Capacitance
1.0
C
8
= 125 °C
C
iss
50
Vishay Siliconix
Si2302ADS
1.5
12
- 55 °C
www.vishay.com
100
2.0
16
2.5
150
20
3