SI1433DH-T1-E3 Vishay, SI1433DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1433DH-T1-E3
• Description: MOSFET P-CH 30V 1.9A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1433DH-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 3V @ 100µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Power - Max: 950mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 950 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -2.2A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1433DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72323
S10-0935-Rev. C, 19-Apr-10
0.75
0.60
0.45
0.30
0.15
0.00
0.1
10
10
1
8
6
4
2
0
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
1
DS
On-Resistance vs. Drain Current
= 2.2 A
V
1
GS
0.3
= 15 V
T
V
J
SD
= 4.5 V
2
= 150 °C
Q
- Source-to-Drain Voltage (V)
g
I
D
2
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
3
0.6
4
3
T
J
0.9
= 25 °C
5
4
V
GS
6
1.2
= 10 V
5
7
1.5
8
6
0.70
0.56
0.42
0.28
0.14
0.00
350
280
210
140
1.6
1.4
1.2
1.0
0.8
0.6
70
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
V
I
D
rss
GS
= 2.2 A
2
= 10 V
6
V
V
T
GS
DS
0
C
C
J
oss
iss
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
Capacitance
12
4
I
50
D
Vishay Siliconix
= 2.2 A
18
6
75
Si1433DH
www.vishay.com
100
24
8
125
150
10
30
3