SI1065X-T1-GE3 Vishay, SI1065X-T1-GE3 Datasheet - Page 5
![MOSFET P-CH 12V 1.18A SC89-6](/photos/5/42/54218/pkg_5880_sml.jpg)
SI1065X-T1-GE3
Manufacturer Part Number
SI1065X-T1-GE3
Description
MOSFET P-CH 12V 1.18A SC89-6
Manufacturer
Vishay
Datasheet
1.SI1065X-T1-GE3.pdf
(6 pages)
Specifications of SI1065X-T1-GE3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
130 mOhm @ 1.18A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
1.18A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 5V
Input Capacitance (ciss) @ Vds
480pF @ 6V
Power - Max
236mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-563F, SOT-666
Transistor Polarity
P Channel
Continuous Drain Current Id
1.18A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
205mohm
Rds(on) Test Voltage Vgs
8V
Threshold Voltage Vgs Typ
-950mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI1065X-T1-GE3TR
TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 74320
S10-2542-Rev. C, 08-Nov-10
0.0001
0.001
0.01
0.1
1
10
www.vishay.com/ppg?74320.
-4
0.02
Duty Cycle = 0.5
0.05
0.1
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
A
10
= 25 °C, unless otherwise noted)
-2
Square Wave Pulse Duration (s)
10
-1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
Vishay Siliconix
100
Z
thJA
thJA
t
t
1
2
(t)
= 540 °C/W
Si1065X
www.vishay.com
1000
5