SI1065X-T1-GE3 Vishay, SI1065X-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI1065X-T1-GE3
• Description: MOSFET P-CH 12V 1.18A SC89-6
• Manufacturer: Vishay

Specifications of SI1065X-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 130 mOhm @ 1.18A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 1.18A
• Vgs(th) (max) @ Id: 950mV @ 250µA
• Gate Charge (qg) @ Vgs: 10.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 480pF @ 6V
• Power - Max: 236mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-563F, SOT-666
• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.18A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 205mohm
• Rds(on) Test Voltage Vgs: 8V
• Threshold Voltage Vgs Typ: -950mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI1065X-T1-GE3TR

TYPICAL CHARACTERISTICS (T
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 74320
S10-2542-Rev. C, 08-Nov-10
0.0001
0.001
0.01
0.1
1
10
www.vishay.com/ppg?74320.
-4
0.02
Duty Cycle = 0.5
0.05
0.1
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
A
10
= 25 °C, unless otherwise noted)
-2
Square Wave Pulse Duration (s)
10
-1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
DM
Vishay Siliconix
100
Z
thJA
thJA
t
t
1
2
(t)
= 540 °C/W
Si1065X
www.vishay.com
1000
5