ZXMN3A03E6TA Diodes Zetex, ZXMN3A03E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXMN3A03E6TA
• Description: MOSFET N-CH 30V 3.7A SOT-23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMN3A03E6TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 7.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN3A03E6TR

ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
ZXMN3A03E6
PARAMETER
Drain-source voltage
Gate source voltage
Continuous drain current V
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Operating and storage temperature range
PARAMETER
Junction to ambient
Junction to ambient
Transient Thermal Impedance graph.
S E M I C O N D U C T O R S
(c)
(a)
(b)
A
A
=25°C
=25°C
V
V
GS
GS
GS
=10V; T
=10V; T
=10V; T
(a)
(b)
(c)
A
A
A
=25°C
=25°C
=70°C
(b)
(a)
(b)
(b)
SYMBOL
V
V
I
I
I
I
P
P
T
SYMBOL
R
R
D
DM
S
SM
2
D
D
j
DSS
GS
:T
θJA
θJA
stg
-55 to +150
VALUE
LIMIT
13.6
113
4.6
3.7
3.7
2.6
1.1
8.8
1.7
73
30
17
17
20
ISSUE 3 - OCTOBER 2005
mW/°C
mW/°C
UNIT
°C/W
°C/W
UNIT
W
W
°C
V
V
A
A
A
A