ZXMP2120E5TA Diodes Zetex, ZXMP2120E5TA Datasheet - Page 3

• Manufacturer Part Number: ZXMP2120E5TA
• Description: MOSFET P-CH 200V 122MA SOT23-5
• Manufacturer: Diodes Zetex

Specifications of ZXMP2120E5TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 Ohm @ 150mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 122mA
• Vgs(th) (max) @ Id: 3.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 100pF @ 25V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-5, SC-74A, SOT-25
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZXMP2120E5TR

ISSUE 2 - SEPTEMBER 2006
ELECTRICAL CHARACTERISTICS (at T
NOTES:
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Static Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(2)(3)
(2)(3)
(2)
(2)
(2) (3)
(2) (3)
(1)
(1)(2)
(2)
(1)
amb
SYMBOL
V
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
= 25°C unless otherwise stated)
3
-300
MIN.
-200
-1.5
50
TYP.
MAX. UNIT CONDITIONS.
-100
-3.5
100
-10
20
28
25
15
12
15
7
7
mA
mS
µA
pF
pF
pF
ns
ns
ns
ns
nA
Ω
V
V
A
ZXMP2120E5
I
I
V
V
V
T=125°C
V
V
V
V
f=1MHz
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=-1mA, V
=-1mA, V
=-200 V, V
=-160 V, V
=-25 V, V
=-10V, I
=-25V,I
=-25 V, V
=
=-25V, I
20V, V
(2)
D
GS
DS
D
=-150mA
D
=-150mA
GS
GS
=-150mA
=0V
= V
DS
GS
GS
=-10V
=0V,
=0V
=0
=0V,
GS