ZVP4525E6TA Diodes Zetex, ZVP4525E6TA Datasheet - Page 2
ZVP4525E6TA
Manufacturer Part Number
ZVP4525E6TA
Description
MOSFET P-CH 250V 197MA SOT-23-6
Manufacturer
Diodes Zetex
Datasheet
1.ZVP4525E6TA.pdf
(8 pages)
Specifications of ZVP4525E6TA
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14 Ohm @ 200mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
197mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
3.45nC @ 10V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
1.1W
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZVP4525E6TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZVP4525E6TA
Manufacturer:
DIODES
Quantity:
3 000
Company:
Part Number:
ZVP4525E6TA
Manufacturer:
LEGERITY
Quantity:
1
ABSOLUTE MAXIMUM RATINGS.
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ZVP4525E6
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
A
=25°C (a)
(V
GS
GS
=10V; TA=25°C)(a)
=10V; TA=70°C)(a)
2
SYMBOL
R
R
SYMBOL
V
V
I
I
I
I
I
P
T
D
D
DM
S
SM
JA
JA
D
j
DSS
GS
:
T
stg
-55 to +150
VALUE
LIMIT
113
-0.75
-250
-197
-157
68
1.1
8.8
-1
-1
40
ISSUE 1 - MARCH 2001
mW/°C
UNIT
°C/W
°C/W
UNIT
mA
mA
W
°C
A
A
A
V
V