SI4431CDY-T1-GE3 Vishay, SI4431CDY-T1-GE3 Datasheet - Page 5

MOSFET P-CH 30V 9A 8-SOIC

SI4431CDY-T1-GE3

Manufacturer Part Number
SI4431CDY-T1-GE3
Description
MOSFET P-CH 30V 9A 8-SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4431CDY-T1-GE3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
32 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1006pF @ 15V
Power - Max
4.2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.032 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
49mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
-2.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4431CDY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4431CDY-T1-GE3
Manufacturer:
VISHAYINTERTECHNOLO
Quantity:
3 032
Part Number:
SI4431CDY-T1-GE3
Manufacturer:
VISHAY
Quantity:
310
Part Number:
SI4431CDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4431CDY-T1-GE3
Quantity:
10 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68748
S09-0322-Rev. B, 02-Mar-09
5
4
3
2
1
0
0
25
Power, Junction-to-Foot
D
T
C
is based on T
- Case Temperature (°C)
50
75
J(max)
100
10
8
6
4
2
0
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
0
125
25
New Product
150
T
C
- Case Temperature (°C)
Current Derating*
50
75
100
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
125
Power Derating, Junction-to-Ambient
25
150
T
A
- Ambient Temperature (°C)
50
75
Vishay Siliconix
100
Si4431CDY
www.vishay.com
125
150
5

Related parts for SI4431CDY-T1-GE3