SI7423DN-T1-E3 Vishay, SI7423DN-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI7423DN-T1-E3
• Description: MOSFET P-CH 30V 7.4A 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7423DN-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 11.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK 1212-8
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 7.4 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -11.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI7423DN-T1-E3TR

Si7423DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
I
D
J
- Temperature (°C)
= 250
25
10
-3
µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
100
10
10
1
0.1
-2
Limited by R
Limited
125
* V
I
D(on)
GS
Single Pulse
T
A
Square Wave Pulse Duration (s)
> minimum V
150
= 25 °C
V
DS
DS(on)*
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
BVDSS Limited
at which R
DS(on)
10
50
40
30
20
10
I
DM
0
1
0.01
Limited
is specified
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
A
t
1
= P
S-83051-Rev. C, 29-Dec-08
t
Document Number: 72582
2
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 65 °C/W
100
600
600