SI7423DN-T1-E3 Vishay, SI7423DN-T1-E3 Datasheet - Page 4
![MOSFET P-CH 30V 7.4A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7423DN-T1-E3
Manufacturer Part Number
SI7423DN-T1-E3
Description
MOSFET P-CH 30V 7.4A 1212-8
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI7423DN-T1-E3.pdf
(6 pages)
Specifications of SI7423DN-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
18 mOhm @ 11.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
7.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
PowerPAK 1212-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.018 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.4 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11.7A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7423DN-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7423DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7423DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
Threshold Voltage
T
I
D
J
- Temperature (°C)
= 250
25
10
-3
µA
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
100
10
10
1
0.1
-2
Limited by R
Limited
125
* V
I
D(on)
GS
Single Pulse
T
A
Square Wave Pulse Duration (s)
> minimum V
150
= 25 °C
V
DS
DS(on)*
Safe Operating Area
- Drain-to-Source Voltage (V)
10
1
-1
GS
BVDSS Limited
at which R
DS(on)
10
50
40
30
20
10
I
DM
0
1
0.01
Limited
is specified
Single Pulse Power, Junction-to-Ambient
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
- T
Time (s)
A
t
1
= P
S-83051-Rev. C, 29-Dec-08
t
Document Number: 72582
2
DM
Z
10
thJA
100
thJA
t
t
1
2
(t)
= 65 °C/W
100
600
600