IRFL110TRPBF Vishay, IRFL110TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRFL110TRPBF
• Description: MOSFET N-CH 100V 1.5A SOT223
• Manufacturer: Vishay

Specifications of IRFL110TRPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 900mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 180pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 540mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: IRFL110PBFTR

IRFL110PbF
Electrical Characteristics @ T
Document Number: 91192
Source-Drain Ratings and Characteristics
Notes:
I
∆V
I
I
V
t
Q
t
I
L
V
L
GSS
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
rr
on
DSS
d(on)
r
d(off)
f
D
S
SD
(BR)DSS
fs
rr
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
GS(th)
DS(on)
oss
rss
V
R
g
gs
gd
iss
(BR)DSS
DD=
G
= 25Ω, I
25V, starting T
/∆T
J
AS
Breakdown Voltage Temp. Coefficient
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Internal Drain Inductance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Source Inductance
= 3.0A (See Figure 12)
J
= 25°C, L = 25 mH
Parameter
Parameter
J
= 25°C (unless otherwise specified)
T
Pulse width ≤ 300µs; duty cycle ≤ 2%.
I
–––
–––
–––
SD
100
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
J
2.0
1.1
Min. Typ. Max. Units
≤ 150°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 5.6A, di/dt ≤ 75A/µs, V
0.63
0.44 0.88
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
180
9.4
6.9
4.0
16
15
6.0
81
15
–––
200
–––
0.54
12
2.5
1.5
–––
250
100
–––
–––
–––
–––
–––
–––
–––
4.0
8.3
2.3
3.8
–––
–––
25
V/°C
µC
ns
nH
µA
nA
nC
V
ns
pF
V
A
Ω
V
S
Between lead, 6mm(0.25in)
from package and center
of die contact.
DD
Reference to 25°C, I
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
≤ V
= 25°C, I
= 25°C, I
= 5.6A
= 5.6A
= 24 Ω
= 8.4 Ω,
= 0V, I
= V
= 50V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 13
= 50V
= 0V
(BR)DSS
GS
, I
D
S
F
Conditions
D
D
,
D
= 250µA
= 5.6A
= 1.5A, V
GS
Conditions
= 0.90A
= 0.90A
= 250µA
GS
See Fig. 10
= 0V, T
= 0V
D
= 1mA
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GS
J
= 125°C
= 0V
S
+L
G
D
)
S
D
2