VN10LP Diodes Zetex, VN10LP Datasheet

MOSFET N-CH 60V 270MA TO92-3

VN10LP

Manufacturer Part Number
VN10LP
Description
MOSFET N-CH 60V 270MA TO92-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet

Specifications of VN10LP

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
270mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
625mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Continuous Drain Current
270mA
Power Dissipation
625mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
E-Line
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Other names
FVN10LP
N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – NOVEMBER 2005
FEATURES
*
*
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate Body Leakage
Zero Gate Voltage
Drain Current (1)
On State Drain
Current(1)
Static Drain Source On
State Resistance (1)
Forward
Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Time (2)(3)
Turn-Off Time (2)(3)
60 Volt V
R
REFER TO ZVN3306A FOR GRAPHS
DS(on)
=5Ω
DS
amb
SYMBOL
BV
V
I
I
I
R
g
C
C
C
t
t
GSS
DSS
D(on)
(on)
(off)
= 25°C
fs
GS(th)
DS(on)
iss
oss
rss
DSS
amb
= 25°C
MIN.
60
0.8
750
100
amb
3-90
TYP.
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
= 25°C unless otherwise stated).
:T
stg
MAX.
2.5
100
10
5.0
7.5
60
25
5
10
10
UNIT
V
V
nA
µA
mA
mS
pF
pF
pF
ns
ns
-55 to +150
VALUE
± 20
270
625
CONDITIONS.
I
ID=1mA, V
V
V
V
V
V
V
V
f=1MHz
V
60
D
3
GS
DS
DS
GS
GS
DS
DS
DD
=100µA, V
TO92 Compatible
VN10LP
=60 V, V
=15 V, V
=15V,I
=25 V, V
=± 20V, V
=10V,I
=5V, I
≈15V, I
D
G
E-Line
S
D
D
D
=200mA
DS
D
=500mA
=500mA
GS
GS
GS
=600mA
GS
= V
DS
=0V
=10V
=0V
=0V
UNIT
=0V
mW
mA
°C
GS
A
V
V

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