SI7620DN-T1-GE3 Vishay, SI7620DN-T1-GE3 Datasheet - Page 4
![MOSFET N-CH 150V 13A 1212-8](/photos/5/42/54273/pkg_5882_sml.jpg)
SI7620DN-T1-GE3
Manufacturer Part Number
SI7620DN-T1-GE3
Description
MOSFET N-CH 150V 13A 1212-8
Manufacturer
Vishay
Datasheet
1.SI7620DN-T1-GE3.pdf
(7 pages)
Specifications of SI7620DN-T1-GE3
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
126 mOhm @ 3.6A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 75V
Power - Max
5.2W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Minimum Operating Temperature
- 55 C
Resistance Drain-source Rds (on)
0.103 Ohms
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
3.6 A
Power Dissipation
3.8 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
13A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
126mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7620DN-T1-GE3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7620DN-T1-GE3
Manufacturer:
Microchip
Quantity:
385
Part Number:
SI7620DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si7620DN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
4.2
3.8
3.4
3.0
2.6
2.2
10
- 50
1
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
T
0.4
J
25
- Temperature (°C)
0.6
50
75
0.8
0.01
I
100
D
0.1
10
T
100
= 250 µA
1
J
0.1
= 25 °C
Limited by R
1.0
Safe Operating Area, Junction-to-Ambient
* V
125
Single Pulse
T
GS
A
= 25 °C
> minimum V
V
150
1.2
DS
1
DS(on)
- Drain-to-Source Voltage (V)
*
GS
at which R
10
0.40
0.32
0.24
0.16
0.08
0.00
DS(on)
50
40
30
20
10
0
100
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
BVDSS
Limited
Single Pulse Power (Junction-to-Ambient)
100 ms
100 µs
1 ms
10 ms
1 s
10 s
DC
0.1
2
V
1000
GS
- Gate-to-Source Voltage (V)
4
1
Time (s)
S-81215-Rev. A, 02-Jun-08
Document Number: 68702
6
10
I
T
T
D
J
J
= 3.6 A
= 125 °C
= 25 °C
8
100
10
600