SI6423DQ-T1-E3 Vishay, SI6423DQ-T1-E3 Datasheet - Page 4
![MOSFET P-CH 12V 8.2A 8-TSSOP](/photos/5/42/54235/pkg_5844_sml.jpg)
SI6423DQ-T1-E3
Manufacturer Part Number
SI6423DQ-T1-E3
Description
MOSFET P-CH 12V 8.2A 8-TSSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI6423DQ-T1-GE3.pdf
(6 pages)
Specifications of SI6423DQ-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 mOhm @ 9.5A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
8.2A
Vgs(th) (max) @ Id
800mV @ 400µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Power - Max
1.05W
Mounting Type
Surface Mount
Package / Case
8-TSSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Drain Quad Source
Resistance Drain-source Rds (on)
0.0085 Ohm @ 4.5 V
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
8.2 A
Power Dissipation
1050 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-9.5A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
8.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI6423DQ-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI6423DQ-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
44 515
Company:
Part Number:
SI6423DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
6 094
Company:
Part Number:
SI6423DQ-T1-E3
Manufacturer:
VISHAY
Quantity:
12 818
Si6423DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
I
D
0
= 400 µA
T
Threshold Voltage
J
- Temperature (°C)
25
10
-3
50
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
0.1
10
100
1
10
0.1
-2
by R
* V
Limited
Safe Operating Area, Junction-to-Case
125
GS
DS
> minimum V
(on)
V
*
150
DS
Square Wave Pulse Duration (s)
Single Pulse
- Drain-to-Source Voltage (V)
T
C
10
1
= 25 °C
-1
GS
at which R
DS(on)
10
60
50
40
30
20
10
0
1
10
1 ms
10 ms
100 ms
1 s
10 s
DC
is specified
-2
Single Pulse Power, Junction-to-Ambient
10
100
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
Time (s)
t
A
1
1
= P
S-80682-Rev. B, 31-Mar-08
t
Document Number: 72257
2
DM
Z
thJA
100
thJA
t
t
1
2
(t)
= 100 °C/W
10
600
100