ZXMN10A09KTC Diodes Zetex, ZXMN10A09KTC Datasheet - Page 3

• Manufacturer Part Number: ZXMN10A09KTC
• Description: MOSFET N-CH 100V 7.7A DPAK
• Manufacturer: Diodes Zetex

Specifications of ZXMN10A09KTC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 4.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1313pF @ 50V
• Power - Max: 2.15W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN10A09KTR

Thermal Characteristics
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
100m
10m
100
60
50
40
30
20
10
10
10
100µ
100µ
0
1
1
T ra n s ie n t T h e rm a l Im p e d a n c e
R
Limit
D=0.5
D=0.2
DS(on)
DC
25mm x 25mm
25mm x 25mm
Pulse Power Dissipation
T
1
1m
1m
V
1oz FR4
T
amb
1s
1oz FR4
Safe Operating Area
DS
amb
=25°C
=25°C
100ms
Drain-Source Voltage (V)
10m 100m
10m 100m
Pulse Width (s)
Pulse Width (s)
25mm x 25mm
1oz FR4
10ms
10
1
1
1ms
50mm x 50mm
100µs
Single Pulse
10
10
Single Pulse
2oz FR4
T
D=0.05
amb
=25°C
D=0.1
100
100
100
www.diodes.com
1k
1k
3 of 8
100m
10m
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30
25
20
15
10
10
100µ
5
0
1
Transient Thermal Impedance
0
R
Limit
D=0.5
D=0.2
DS(on)
50mm x 50mm
DC
50mm x 50mm
20
1
1m
T
V
2oz FR4
T
amb
DS
S a fe O p e ra tin g A re a
2oz FR4
amb
1s
=25°C
=25°C
40
100ms
Temperature (°C)
Drain-Source Voltage (V)
10m 100m
Derating Curve
Pulse Width (s)
60
Diodes Incorporated
A Product Line of
10ms
80
10
50mm x 50mm
100 120 140 160
1ms
1
2oz FR4
25mm x 25mm
Single Pulse
100µs
1oz FR4
10
D=0.05
D=0.1
100
ZXMN10A09K
100
1k
© Diodes Incorporated
January 2010