IRFD9014PBF Vishay, IRFD9014PBF Datasheet - Page 6
![MOSFET P-CH 60V 1.1A 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRFD9014PBF
Manufacturer Part Number
IRFD9014PBF
Description
MOSFET P-CH 60V 1.1A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRFD9014PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 660mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
270pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.1 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
-1.1A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
500mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD9014PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFD9014PBF
Manufacturer:
ST
Quantity:
8 529
Part Number:
IRFD9014PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFD9014, SiHFD9014
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
g
Q
V
GS
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T.
0.01 W
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
GS
Same type as D.U.T.
Current regulator
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
t
p
I
G
S10-2463-Rev. C, 08-Nov-10
Document Number: 91136
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD