IRLD014PBF Vishay, IRLD014PBF Datasheet - Page 2
![MOSFET N-CH 60V 1.7A 4-DIP](/photos/5/47/54769/698-4-dip_sml.jpg)
IRLD014PBF
Manufacturer Part Number
IRLD014PBF
Description
MOSFET N-CH 60V 1.7A 4-DIP
Manufacturer
Vishay
Specifications of IRLD014PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 1A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8.4nC @ 5V
Input Capacitance (ciss) @ Vds
400pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.2 Ohm @ 5 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
1.7 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
1.7A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
5V
Threshold Voltage Vgs Typ
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRLD014PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRLD014, SiHLD014
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 µs; duty cycle 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
t
t
I
I
C
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
V
T
GS
GS
GS
J
V
R
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
DS
g
= 5.0 V
= 4.0 V
= 5.0 V
J
Reference to 25 °C, I
= 12 , R
= 25 °C, I
= 48 V, V
V
V
V
V
f = 1.0 MHz, see fig. 5
V
TYP.
TEST CONDITIONS
DS
DS
GS
DS
DD
-
= V
= 25 V, I
F
= 0 V, I
= 60 V, V
V
= 30 V, I
V
= 10 A, dI/dt = 100 A/µs
GS
V
D
S
DS
GS
GS
GS
= 2.8 , see fig. 10
= 1.7 A, V
I
= ± 10 V
D
, I
= 25 V
= 0 V, T
see fig. 6 and 13
= 0 V
= 10 A, V
D
D
D
= 250 µA
I
D
= 250 µA
GS
I
D
= 1.0 A
D
= 10 A
= 0.85 A
= 1.0 A
= 0 V
D
J
GS
= 1 mA
= 150 °C
G
DS
G
= 0 V
b
= 48 V
b
b
MAX.
D
S
b
b
D
S
b
120
b
MIN.
1.0
1.9
60
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2465-Rev. D, 08-Nov-10
Document Number: 91307
0.070
TYP.
0.34
400
170
110
9.3
4.0
6.0
42
17
26
93
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
0.20
0.28
0.65
S
250
130
2.0
8.4
2.6
6.4
1.7
1.6
25
14
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
S
A
V