IRFU9020PBF Vishay, IRFU9020PBF Datasheet

no-image

IRFU9020PBF

Manufacturer Part Number
IRFU9020PBF
Description
MOSFET P-CH 50V 9.9A I-PAK
Manufacturer
Vishay
Datasheet

Specifications of IRFU9020PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 5.7A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
9.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
490pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.9 A
Power Dissipation
42000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-9.9A
Drain Source Voltage Vds
-50V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9020PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU9020PBF
Quantity:
72 000
Note
a. See device orientation.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90350
S10-1135-Rev. C, 10-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
(TO-252)
D
DS
DS(on)
g
gs
gd
DPAK
(Max.) (nC)
(nC)
(V)
(nC)
(Ω)
G
S
D
(TO-251)
IPAK
a
G
D S
V
GS
= - 10 V
DPAK (TO-252)
SiHFR9020-GE3
IRFR9020PbF
SiHFR9020-E3
IRFR9020
SiHFR9020
G
Single
P-Channel MOSFET
- 50
IRFR9020, IRFU9020, SiHFR9020, SiHFU9020
6.5
6.5
14
C
= 25 °C, unless otherwise noted
Power MOSFET
S
D
V
0.28
GS
at - 10 V
DPAK (TO-252)
SiHFR9020TR-GE3
IRFR9020TRPbF
SiHFR9020T-E3
IRFR9020TR
SiHFR9020T
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Surface
• Straight Lead Option (Order As IRFU9020,
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The Power MOSFET technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt.
The Power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The TO-252
surface mount package brings the advantages of Power
MOSFET’s to high volume applications where PC Board
surface mounting is desirable. The surface mount option
IRFR9020, SiHFR9020 is provided on 16mm tape. The
straight lead option IRFU9020, SiHFU9020 of the device is
called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
Definition
SiHFR9020)
SiHFU9020)
a
a
a
a
a
SYMBOL
Mountable
V
V
I
DM
I
GS
DS
D
DPAK (TO-252)
SiHFR9020TRL-GE3
IRFR9020TRLPbF
SiHFR9020TL-E3
IRFR9020TRL
SiHFR9020TL
(Order
a
a
a
LIMIT
a
± 20
- 9.9
- 6.3
0.33
- 50
- 40
a
As
Vishay Siliconix
IPAK (TO-251)
SiHFU9020-GE3
IRFU9020PbF
SiHFU9020-E3
IRFU9020
SiHFU9020
IRFR9020,
www.vishay.com
UNIT
W/°C
V
A
1

Related parts for IRFU9020PBF

IRFU9020PBF Summary of contents

Page 1

... DPAK (TO-252) SiHFR9020TR-GE3 a IRFR9020TRPbF a SiHFR9020T-E3 a IRFR9020TR a SiHFR9020T = 25 °C, unless otherwise noted ° 100 °C C Vishay Siliconix Mountable (Order As IRFR9020, DPAK (TO-252) IPAK (TO-251 SiHFR9020TRL-GE3 SiHFU9020-GE3 a IRFR9020TRLPbF IRFU9020PbF a SiHFR9020TL-E3 SiHFU9020-E3 a IRFR9020TRL IRFU9020 a SiHFR9020TL SiHFU9020 SYMBOL LIMIT ± 9 6 0.33 www.vishay.com UNIT V A W/°C 1 ...

Page 2

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS T PARAMETER b Single Pulse Avalanche Energy a Repetitive Avalanche Current a Repetitive Avalanche Energy Maximum Power Dissipation c Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14). ...

Page 3

... SYMBOL TEST CONDITIONS MOSFET symbol I S showing the integral reverse junction diode ° 9 ° 9,7 A, dI/dt = 100 A/μ Intrinsic turn-on time is negligible (turn-on is dominated Vishay Siliconix MIN. TYP. MAX 9 6 110 280 b 0.17 0.34 0.85 and L S Fig Typical Saturation Characteristics Fig ...

Page 4

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig Typical Transconductance vs. Drain Current Fig Typical Source-Drain Diode Forward Voltage www.vishay.com 4 Fig Breakdown Voltage vs. Temperature Fig Normalized On-Resistance vs. Temperature Document Number: 90350 S10-1135-Rev. C, 10-May-10 ...

Page 5

... Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage Document Number: 90350 S10-1135-Rev. C, 10-May-10 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Fig Typical On-Resistance vs. Drain Current Fig Maximum Drain Current vs. Case Temperature Vishay Siliconix www.vishay.com 5 ...

Page 6

... IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 Vishay Siliconix Fig. 13a - Maximum Avalanche vs. Starting Junction Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration www.vishay.com 6 Fig. 13b - Unclamped Inductive Test Circuit Fig. 13c - Unclamped Inductive Waveforms Document Number: 90350 S10-1135-Rev. C, 10-May-10 ...

Page 7

... Fig. 15a - Switching Time Waveforms Charge Fig. 16a - Basic Gate Charge Waveform Document Number: 90350 S10-1135-Rev. C, 10-May-10 IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 t t d(off) f Vishay Siliconix Fig. 15b - Switching Time Test Circuit Fig. 16b - Gate Charge Test Circuit www.vishay.com 7 ...

Page 8

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90350. www.vishay.com ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords