IRFD9220PBF Vishay, IRFD9220PBF Datasheet - Page 2

• Manufacturer Part Number: IRFD9220PBF
• Description: MOSFET P-CH 200V 560MA 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9220PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 340mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 560mA
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 340pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 1.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.56 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -560mA
• Drain Source Voltage Vds: -200V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 1.5Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9220PBF

IRFD9220, SiHFD9220
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 µs; duty cycle  2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted)
SYMBOL
SYMBOL
V
R
V
t
t
I
I
C
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
DS
L
SM
I
t
t
DS
oss
t
SD
thJA
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
V
GS
GS
T
= 25 °C, I
DS
R
J
Reference to 25 °C, I
= - 10 V
= - 10 V
g
= 25 °C, I
= - 160 V, V
= 18 , R
V
V
V
V
V
DS
DD
f = 1.0 MHz, see fig. 5
DS
DS
TYP.
GS
TEST CONDITIONS
= - 50 V, I
= - 100 V, I
-
= - 200 V, V
F
= V
= 0 V, I
V
V
= - 3.9 A, dI/dt = 100 A/µs
S
V
GS
DS
I
D
GS
D
= - 0.56 A, V
GS
= - 2.1 A, V
GS
= 24 , see fig. 10
, I
= ± 20 V
= - 25 V,
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
D
= - 250 µA
I
= - 250 µA
D
D
= - 0.35 A
GS
= - 0.34 A
= - 3.9 A,
D
= 0 V
= - 1 mA
DS
J
GS
G
G
= 125 °C
= - 160 V,
= 0 V
b
b
MAX.
D
S
b
b
120
D
S
b
b
- 200
MIN.
- 2.0
0.55
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2464-Rev. C, 25-Oct-10
Document Number: 91141
- 0.22
TYP.
0.97
340
110
150
8.8
7.3
4.0
6.0
33
27
19
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
- 0.56
MAX.
- 100
- 500
- 4.0
- 4.5
- 6.3
300
1.5
3.2
8.4
2.0
15
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V

S
A
V