IRLR110 Vishay, IRLR110 Datasheet

MOSFET N-CH 100V 4.3A DPAK

IRLR110

Manufacturer Part Number
IRLR110
Description
MOSFET N-CH 100V 4.3A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRLR110

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
540 mOhm @ 2.6A, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
6.1nC @ 5V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
4.3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR110

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Company
Part Number
Manufacturer
Quantity
Price
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IRLR110
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Part Number:
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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91323
S10-1139-Rev. C, 17-May-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
DS
D
DS(on)
g
gs
gd
SD
DPAK
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 5.6 A, dI/dt ≤ 140 A/μs, V
= 25 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 8.1 mH, R
G
D S
c
a
a
b
DD
V
GS
≤ V
e
= 5.0 V
DS
DPAK (TO-252)
SiHLR110-GE3
IRLR110PbF
SiHLR110-E3
IRLR110
SiHLR110
G
, T
N-Channel MOSFET
e
J
Single
≤ 150 °C.
100
6.1
2.0
3.3
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted
Power MOSFET
V
0.54
IRLR110, IRLU110, SiHLR110, SiHLU110
GS
AS
at 5.0 V
= 4.3 A (see fig. 12).
T
T
C
A
for 10 s
= 25 °C
DPAK (TO-252)
SiHLR110TR-GE3
IRLR110TRPbF
SiHLR110T-E3
IRLR110TR
SiHLR110T
= 25 °C
T
T
C
C
= 100 °C
= 25 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR110, SiHLR110)
• Straight Lead (IRLU110, SiHLU110)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU, SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
Definition
a
a
DS(on)
a
a
Specified at V
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
, T
P
device
DM
I
AR
GS
DS
AS
AR
D
D
DPAK (TO-252)
SiHLR110TRL-GE3
IRLR110TRLPbF
SiHLR110TL-E3
IRLR110TRL
SiHLR110TL
stg
GS
design,
= 4 V and 5 V
a
a
- 55 to + 150
LIMIT
0.020
260
± 10
0.20
100
100
4.3
2.7
4.3
2.5
2.5
5.5
17
25
low
Vishay Siliconix
d
IPAK (TO-251)
SiHLU110-GE3
IRLU110PbF
SiHLU110-E3
IRLU110
SiHLU110
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and
1

Related parts for IRLR110

IRLR110 Summary of contents

Page 1

... FEATURES • Halogen-free According to IEC 61249-2-21 100 Definition • Dynamic dV/dt Rating 0.54 • Repetitive Avalanche Rated 6.1 • Surface Mount (IRLR110, SiHLR110) 2.0 • Straight Lead (IRLU110, SiHLU110) 3.3 • Available in Tape and Reel Single • Logic-Level Gate Drive • R ...

Page 2

... IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91323 S10-1139-Rev. C, 17-May-10 IRLR110, IRLU110, SiHLR110, SiHLU110 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91323 S10-1139-Rev. C, 17-May-10 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91323 S10-1139-Rev. C, 17-May-10 IRLR110, IRLU110, SiHLR110, SiHLU110 5.0 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Vary t to obtain p required I AS D.U 5.0 V 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91323. Document Number: 91323 S10-1139-Rev. C, 17-May-10 IRLR110, IRLU110, SiHLR110, SiHLU110 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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