IRFR020 Vishay, IRFR020 Datasheet

MOSFET N-CH 60V 14A DPAK

IRFR020

Manufacturer Part Number
IRFR020
Description
MOSFET N-CH 60V 14A DPAK
Manufacturer
Vishay
Datasheet

Specifications of IRFR020

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR020

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Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90335
S-82995-Rev. A, 12-Jan-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
(TO-252)
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
D
DS
DPAK
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 17 A, dI/dt ≤ 110 A/µs, V
= 25 V, starting T
G
(Ω)
S
D
(TO-251)
IPAK
a
J
= 25 °C, L = 541 µH, R
G
c
D S
DD
b
V
GS
≤ V
DPAK (TO-252)
IRFR020PbF
SiHFR020-E3
IRFR020
SiHFR020
e
= 10 V
DS
G
, T
N-Channel MOSFET
e
J
Single
≤ 150 °C.
5.8
60
25
11
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.10
IRFR020, IRFU020, SiHFR020, SiHFU020
GS
AS
at 10 V
= 14 A (see fig. 12).
T
T
for 10 s
C
A
= 25 °C
= 25 °C
T
T
C
C
DPAK (TO-252)
IRFR020TRPbF
SiHFR020T-E3
IRFR020TR
SiHFR020T
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Surface Mount (IRFR020, SiHFR020)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques.
a
a
SYMBOL
T
a
a
dV/dt
J
V
V
E
I
P
, T
device
I
DM
DS
GS
AS
D
D
stg
design,
- 55 to + 150
IPAK (TO-251)
IRFU020PbF
SiHFU020-E3
IRFU020
SiHFU020
LIMIT
0.020
260
± 20
0.33
9.0
2.5
5.5
60
14
56
91
42
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

Related parts for IRFR020

IRFR020 Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90335 S-82995-Rev. A, 12-Jan-09 IRFR020, IRFU020, SiHFR020, SiHFU020 Power MOSFET FEATURES • Dynamic dV/dt Rating 60 • Surface Mount (IRFR020, SiHFR020) 0.10 • Available in Tape and Reel 25 5.8 • Fast Switching 11 • Ease of Paralleling Single • ...

Page 2

... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 90335 S-82995-Rev. A, 12-Jan-09 IRFR020, IRFU020, SiHFR020, SiHFU020 = 25 °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 90335 S-82995-Rev. A, 12-Jan-09 ...

Page 5

... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90335 S-82995-Rev. A, 12-Jan-09 IRFR020, IRFU020, SiHFR020, SiHFU020 Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFR020, IRFU020, SiHFR020, SiHFU020 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current V DS ...

Page 7

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90335. Document Number: 90335 S-82995-Rev. A, 12-Jan-09 IRFR020, IRFU020, SiHFR020, SiHFU020 Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...

Page 8

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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