IRFZ48RSPBF Vishay, IRFZ48RSPBF Datasheet - Page 2

• Manufacturer Part Number: IRFZ48RSPBF
• Description: MOSFET N-CH 60V 50A D2PAK
• Manufacturer: Vishay

Specifications of IRFZ48RSPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 50A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFZ48RSPBF

IRFZ48RS/LPbF
Source-Drain Ratings and Characteristics
* Current limited by the package, (Die Current = 72A)
Electrical Characteristics @ T
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Document Number: 91296
‚
Notes:
V
∆V
R
V
g
I
I
Q
Q
Q
t
t
t
t
C
C
C
L
L
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
fs
D
S
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
V
G
DD
= 25Ω, I
= 25V, Starting T
/∆T
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
AS
= 72A. (See Figure 12)
J
= 25°C, L = 22µH
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Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
60
27
–––
–––
–––
–––
–––
––– 0.50 0.80
J
≤ 175°C
Intrinsic turn-on time is negligible (turn-on is dominated by L
≤ 72A di/d ≤ 200A/µs, V
0.060 –––
2400 –––
1300 –––
–––
––– 0.018
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
250
210
250
190
–––
–––
–––
120
8.1
4.5
7.5
–––
–––
–––
250
100
110
–––
–––
–––
–––
–––
–––
180
4.0
50*
2.0
25
29
36
290
V/°C
µA
nA
nC
ns
nH
µC
pF
ns
Ω
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
DD
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= 72A
= 72A
= 25°C, I
= 25°C, I
= 0.34Ω, See Fig. 10 „
= 9.1Ω
≤ V
= 0V, I
= 10V, I
= V
= 25V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 0V
= 25V
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
Conditions
GS
GS
= 72A
= 72A, V
,
= 43A
= 250µA
= 43A„
„
= 0V
= 0V, T
D
www.vishay.com
GS
= 1mA
„
J
= 150°C
= 0V
G
G
S
„
+L
„
D
S
D
)
S
D
2