IRFR320 Vishay, IRFR320 Datasheet - Page 5
![MOSFET N-CH 400V 3.1A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR320
Manufacturer Part Number
IRFR320
Description
MOSFET N-CH 400V 3.1A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR320.pdf
(8 pages)
Specifications of IRFR320
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFR320
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR320
Manufacturer:
IR
Quantity:
39 400
Company:
Part Number:
IRFR320A
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
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Manufacturer:
IR
Quantity:
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Company:
Part Number:
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Manufacturer:
IR
Quantity:
194
Part Number:
IRFR320TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
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Manufacturer:
RENESAS
Quantity:
151
Part Number:
IRFR320TRRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91273
S-82991-Rev. B, 12-Jan-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR320, IRFU320, SiHFR320, SiHFU320
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
V
DS
t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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