IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 6

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 14 - Maximum Avalanche Energy s. Drain Current
750
600
450
300
150
Fig. 13 - Threshold Voltage vs. Temperature
Fig. 15a - Unclamped Inductive Test Circuit
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
25
- 75 - 50 - 25
Starting T , Junction Temperature
R G
20 V
V DS
50
t p
I AS
T
D.U.T
J
, Temperature (°C)
75
0.01 Ω
0
L
25
100
50
TOP
BOTTOM 23A
15 V
75
I
Driver
D
125
= 250 µA
This datasheet is subject to change without notice.
+
- V DD
100
(°C)
10A
15A
I
D
A
125
150
150
Fig. 15b - Unclamped Inductive Waveforms
10 V
Fig. 16b - Basic Gate Charge Waveform
I
AS
12 V
V
Fig. 16a - Gate Charge Test Circuit
V
G
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
GS
Current sampling resistors
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
t
p
GD
G
I
G
S11-0445-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91209
D.U.T.
V
I
D
DS
+
-
V
DS