IRFP450LCPBF Vishay, IRFP450LCPBF Datasheet - Page 2

• Manufacturer Part Number: IRFP450LCPBF
• Description: MOSFET N-CH 500V 14A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP450LCPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 74nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.4 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 8.7 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 190000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP450LCPBF

IRFP450LC, SiHFP450LC
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
R
DS
GS
GS
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
J
= 6.2 Ω, R
= 400 V, V
= 10 V
= 10 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
0.24
TEST CONDITIONS
DS
DD
DS
GS
DS
-
-
= 500 V, V
= V
= 50 V, I
= 250 V, I
F
= 0 V, I
V
V
= 14 A, dI/dt = 100 A/µs
V
GS
DS
S
GS
GS
D
GS
I
= 14 A, V
= ± 20 V
= 17 Ω, see fig. 10
D
= 25 V,
, I
= 0 V,
= 0 V, T
= 14 A, V
D
D
see fig. 6 and 13
D
= 250 µA
= 250 µA
D
GS
= 8.4 A
I
= 14 A,
D
D
= 0 V
= 8.4 A
GS
= 1 mA
J
G
G
= 125 °C
DS
= 0 V
b
= 400 V,
b
MAX.
D
S
b
0.65
D
S
b
40
b
-
b
MIN.
500
2.0
8.7
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S-81271-Rev. A, 16-Jun-08
Document Number: 91231
TYP.
2200
0.59
320
580
5.0
5.1
28
14
49
30
30
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.40
S
250
870
4.0
1.4
7.7
25
74
19
35
14
56
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V