PSMN7R0-100PS,127 NXP Semiconductors, PSMN7R0-100PS,127 Datasheet

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PSMN7R0-100PS,127

Manufacturer Part Number
PSMN7R0-100PS,127
Description
MOSFET N-CH 100V 100A TO220AB
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN7R0-100PS,127

Package / Case
TO-220AB-3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
6686pF @ 50V
Power - Max
269W
Mounting Type
Through Hole
Gate Charge Qg
125 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 mOhms
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
100 A
Power Dissipation
269 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4971-5
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
Table 1.
Symbol Parameter
V
I
P
T
Avalanche ruggedness
E
Dynamic characteristics
Q
Q
D
j
DS
tot
DS(AL)S
GD
G(tot)
High efficiency due to low switching
and conduction losses
DC-to-DC converters
Load switching
PSMN7R0-100PS
N-channel 100V 6.8 mΩ standard level MOSFET in TO220
Rev. 02 — 7 January 2010
drain-source voltage T
drain current
total power
dissipation
junction temperature
non-repetitive
drain-source
avalanche energy
gate-drain charge
total gate charge
Quick reference
Conditions
T
see
T
V
I
unclamped; R
V
V
and
V
V
and
D
j
mb
mb
GS
GS
DS
GS
DS
≥ 25 °C; T
= 100 A; V
Figure 1
= 25 °C; V
= 25 °C; see
17
14
= 50 V; see
= 50 V; see
= 10 V; T
= 10 V; I
= 10 V; I
j
sup
D
D
≤ 175 °C
j(init)
GS
GS
= 25 A;
= 25 A;
= 100 V;
Figure 14
Figure 17
= 50 Ω
Figure 2
= 10 V;
= 25 °C;
Suitable for standard level gate drive
Motor control
Server power supplies
[1]
Min
-
-
-
-55
-
-
-
Product data sheet
Typ
-
-
-
-
-
36
125
Max
100
100
269
175
315
-
-
Unit
V
A
W
°C
mJ
nC
nC

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PSMN7R0-100PS,127 Summary of contents

Page 1

... PSMN7R0-100PS N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Rev. 02 — 7 January 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...

Page 2

... Ordering information Table 3. Ordering information Type number Package Name Description PSMN7R0-100PS TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Quick reference …continued Conditions ...

Page 3

... V; unclamped; R sup GS 003aad558 120 P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Max - 100 - 100 - [1] - 100 Figure 3 - 475 - 269 -55 175 -55 ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003aad559 = 10 μ 100 μ 100 ms ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Conditions see Figure 4 vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Typ Max Unit - 0.3 0.56 K K/W 003a a d560 t p δ ...

Page 6

... Figure 17 and see Figure 14 and see Figure see Figure 14 and see Figure 14 and MHz see Figure 15 All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Typ Max 100 - - 4 150 - 0. 100 - 10 100 - - 5.4 6 125 - - 100 - - 19 ...

Page 7

... C (pF) 10000 5 8000 6000 4.5 4000 V ( 2000 (V) DS Fig 6. Input and reverse transfer capacitances as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Min Typ Max Unit - 34 45 103 49 0.8 1.2 ...

Page 8

... V GS(th) ( − (V) GS Fig 10. Gate-source threshold voltage as a function of junction temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003a a d568 = 175 ° ° (V) GS 003aad280 max typ min 0 60 120 ...

Page 9

... V (V) GS Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003a a d563 100 I (A) D Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003aad774 0 60 120 T (° GS(pl) V GS(th GS1 ...

Page 10

... V (V) DS Fig 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 003a a d570 = 175 ° °C 0 0.3 0.6 0 © NXP B.V. 2010. All rights reserved. ...

Page 11

... Fig 17. Gate-source voltage as a function of gate charge; typical values PSMN7R0-100PS_2 Product data sheet N-channel 100V 6.8 mΩ standard level MOSFET in TO220 003a a d569 V = 50V 105 Q (nC) G All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS 140 © NXP B.V. 2010. All rights reserved ...

Page 12

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3 ...

Page 13

... N-channel 100V 6.8 mΩ standard level MOSFET in TO220 Data sheet status Change notice Product data sheet - Objective data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS Supersedes PSMN7R0-100PS_1 - © NXP B.V. 2010. All rights reserved ...

Page 14

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS © NXP B.V. 2010. All rights reserved ...

Page 15

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 7 January 2010 PSMN7R0-100PS © NXP B.V. 2010. All rights reserved ...

Page 16

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 7 January 2010 Document identifier: PSMN7R0-100PS_2 ...

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