PSMN5R0-80PS,127 NXP Semiconductors, PSMN5R0-80PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN5R0-80PS,127
• Description: MOSFET N-CH 80V 100A TO-220AB3
• Manufacturer: NXP Semiconductors

Specifications of PSMN5R0-80PS,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 101nC @ 10V
• Input Capacitance (ciss) @ Vds: 6793pF @ 12V
• Power - Max: 270W
• Mounting Type: Through Hole
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.7 mOhms
• Drain-source Breakdown Voltage: 80 V
• Continuous Drain Current: 100 A
• Power Dissipation: 270 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4894-5; 934063912127

NXP Semiconductors
PSMN5R0-80PS_2
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
80
60
40
20
S
0
0
0.2
Rev. 02 — 23 June 2009
0.4
175 °C
0.6
0.8
N-channel 80 V 4.7 mΩ standard level MOSFET
T
j
= 25 °C
003aad084
1
V
SD
(V)
1.2
PSMN5R0-80PS
© NXP B.V. 2009. All rights reserved.
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