IRLML2803TRPBF International Rectifier, IRLML2803TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRLML2803TRPBF
• Description: MOSFET N-CH 30V 1.2A SOT-23
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLML2803TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 910mA, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 10V
• Input Capacitance (ciss) @ Vds: 85pF @ 25V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Current, Drain: 1.2 A
• Gate Charge, Total: 3.3 nC
• Package Type: Micro3
• Polarization: N-Channel
• Power Dissipation: 540 mW
• Resistance, Drain To Source On: 0.25 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 9 ns
• Time, Turn-on Delay: 3.9 ns
• Transconductance, Forward: 0.87 S
• Voltage, Breakdown, Drain To Source: 30 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±20 V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.25Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1.2A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 400 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 1.2 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 3.3 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML2803PBFTR

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0.1
10
0.1
10
1
1
3.0
0.1
TOP
BOTTOM 3.0V
3.5
V
V
GS
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 25°C
J
4.5
1
5.0
V
20µs PULSE WIDTH
T = 150°C
20µs PULSE WIDTH
T = 25°C
J
J
DS
= 10V
3.0V
5.5
6.0
6.5
10
A
A
2.0
1.5
1.0
0.5
0.0
0.1
10
1
-60
0.1
TOP
BOTTOM 3.0V
I
D
-40
= 0.91A
T , Junction Temperature (°C)
V
-20
J
15V
VGS
10V
7.0V
5.5V
4.5V
4.0V
3.5V
DS
, Drain-to-Source Voltage (V)
0
20
40
1
60
20µs PULSE WIDTH
T = 150°C
J
80
100 120 140 160
3.0V
V
GS
= 10V
3
10
A
A