IRLML0060TRPBF International Rectifier, IRLML0060TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRLML0060TRPBF
• Description: MOSFET N-CH 60V 2.7A SOT-23-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLML0060TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 2.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 2.5V @ 25µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 290pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 116 mOhms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 1.25 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 2.5 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLML0060TRPBFTR

Fig 12. Typical On-Resistance vs. Gate
6
400
300
200
100
V
Fig 14a. Basic Gate Charge Waveform
GS
0
3
V
G
V GS, Gate -to -Source Voltage (V)
4
Q
GS
Voltage
5
6
Charge
Q
Q
T J = 25°C
GD
T J = 125°C
G
7
8
I D = 2.7A
9
10
Fig 13. Typical On-Resistance vs. Drain
150
125
100
75
50
Fig 14b. Gate Charge Test Circuit
0
12V
V
GS
Same Type as D.U.T.
2
Current Regulator
.2µF
I D , Drain Current (A)
50KΩ
3mA
Current
4
Current Sampling Resistors
Vgs = 10V
.3µF
I
G
6
Vgs = 4.5V
D.U.T.
8
www.irf.com
I
D
+
-
10
V
DS
12