IRLMS1902TRPBF International Rectifier, IRLMS1902TRPBF Datasheet - Page 8

• Manufacturer Part Number: IRLMS1902TRPBF
• Description: MOSFET N-CH 20V 3.2A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLMS1902TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 100 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 300pF @ 15V
• Power - Max: 1.7W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 100 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 3.2 A
• Power Dissipation: 1.7 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLMS1902PBFTR

Micro6 Tape & Reel Information
Dimensions are shown in milimeters (inches)
8
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
( 7.008 )
178.00
MAX.
4mm
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
9.90 ( .390 )
8.40 ( .331 )
8mm
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