IRLL024NTRPBF International Rectifier, IRLL024NTRPBF Datasheet

IRLL024NTRPBF

Manufacturer Part Number

IRLL024NTRPBF

Description

MOSFET N-CH 55V 3.1A SOT223

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRLL024NTRPBF.pdf (8 pages)

2.IRLL024NTRPBF.pdf (4 pages)

Specifications of IRLL024NTRPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

65 mOhm @ 3.1A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

3.1A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

15.6nC @ 5V

Input Capacitance (ciss) @ Vds

510pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Current, Drain

4.4 A

Gate Charge, Total

10.4 nC

Package Type

SOT-223

Polarization

N-Channel

Power Dissipation

2.1 W

Resistance, Drain To Source On

0.065 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

18 ns

Time, Turn-on Delay

7.4 ns

Transconductance, Forward

3.3 S

Voltage, Breakdown, Drain To Source

55 V

Voltage, Forward, Diode

1 V

Voltage, Gate To Source

±16 V

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

100 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

16 V

Continuous Drain Current

4.4 A

Mounting Style

SMD/SMT

Gate Charge Qg

10.4 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRLL024NPBFTR
IRLL024NTRPBF
IRLL024NTRPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRLL024NTRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRLL024NTRPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRLL024NTRPBF

Quantity:

20 550

Current page: 1 of 8
Download datasheet (146Kb)

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

Absolute Maximum Ratings

Thermal Resistance

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

dv/dt

θJA

@ T

Surface Mount

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

Fast Switching

Fully Avalanche Rated

Lead-Free

STG

= 25°C

= 70°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

Single Pulse Avalanche Energy‚

Avalanche Current

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt ƒ

Junction and Storage Temperature Range

Junction-to-Amb. (PCB Mount, steady state)*

Junction-to-Amb. (PCB Mount, steady state)**

Parameter

@ 10V**

@ 10V*

Typ.

IRLL024NPbF

HEXFET

-55 to + 150

S O T -2 2 3

Max.

± 16

120

4.4

3.1

2.5

2.1

1.0

8.3

5.0

3.1

0.1

Max.

DS(on)

Power MOSFET

120

DSS

= 3.1A

= 0.065Ω

= 55V

PD - 95221

Units

mW/°C

Units

°C/W

V/ns

°C

04/27/04

Related parts for IRLL024NTRPBF

IRLL024NTRPBF Summary of contents

Page 1

... Fully Avalanche Rated Lead-Free l Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRLL024NPbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...

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IRLL024NTRPBF International Rectifier, IRLL024NTRPBF Datasheet

IRLL024NTRPBF

Specifications of IRLL024NTRPBF

Available stocks

Related parts for IRLL024NTRPBF

IRLL024NTRPBF Summary of contents

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