IRFHM9331TR2PBF International Rectifier, IRFHM9331TR2PBF Datasheet - Page 3

• Manufacturer Part Number: IRFHM9331TR2PBF
• Description: MOSFET P-CH 30V 11A 3X3 PQFN
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFHM9331TR2PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14.6 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1543pF @ 25V
• Power - Max: 2.8W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerVQFN
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 0.01ohm
• Rds(on) Test Voltage Vgs: -20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: QFN
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: - 24 A
• Power Dissipation: 2.8 W
• Gate Charge Qg: 16 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFHM9331TR2PBFTR

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
1000
1000
100
100
0.1
100
10
0.1
10
Fig 3. Typical Transfer Characteristics
1
1
Fig 1. Typical Output Characteristics
0.1
1.5
1
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
T J = 150°C
2.5
1
-2.7V
≤ 60µs
Tj = 25°C
C oss
C rss
C iss
f = 1 KHZ
V DS = -15V
≤60µs PULSE WIDTH
10
3
PULSE WIDTH
T J = 25°C
10
3.5
TOP
BOTTOM
4
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
100
100
4.5
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
10
1.6
1.4
1.2
1.0
0.8
0.6
14
12
10
Fig 2. Typical Output Characteristics
1
8
6
4
2
0
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = -9A
≤ 60µs
Tj = 150°C
I D = -11A
V GS = -10V
5
-V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
PULSE WIDTH
Q G , Total Gate Charge (nC)
10
V DS = -24V
V DS = -15V
VDS= -6V
15
1
-2.7V
20
25
10
30
TOP
BOTTOM
35
40
VGS
-10V
-5.0V
-4.5V
-3.5V
-3.3V
-3.1V
-2.9V
-2.7V
100
45
3