IRLR3636TRPBF International Rectifier, IRLR3636TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRLR3636TRPBF
• Description: MOSFET N-CH 60V 50A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR3636TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.8 mohm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 2.5V @ 100µA
• Gate Charge (qg) @ Vgs: 49nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3779pF @ 50V
• Power - Max: 143W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 99A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 5.4mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRLR3636TRPBFTR

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Fig 15. Maximum Avalanche Energy vs. Temperature
200
150
100
50
0
25
0.001
1000
0.01
100
Starting T J , Junction Temperature (°C)
0.1
0.1
10
10
1.0E-06
1
1E-006
1
50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
TOP
BOTTOM 1.0% Duty Cycle
I D = 50A
75
Duty Cycle = Single Pulse
D = 0.50
100
0.10
0.20
0.05
0.02
0.01
0.10
Single Pulse
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1.0E-05
1E-005
125
Fig 14. Typical Avalanche Current vs.Pulsewidth
150
175
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
τ
J
τ
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
J
tav (sec)
τ
av
av =
1
Ci= τi/Ri
thJC
D (ave)
τ
1
Ci
= Allowable avalanche current.
=
Average time in avalanche.
(D, t
Allowable rise in junction temperature, not to exceed T
i/Ri
R
= Average power dissipation per single avalanche pulse.
1
av
R
1
) = Transient thermal resistance, see Figures 13)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
1.0E-03
jmax
0.001
τ
2
τ
R
. This is validated for every part type.
2
2
R
2
P
D (ave)
R
τ
3
3
R
τ
3
3
= 1/2 ( 1.3·BV·I
I
E
av
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
AS (AR)
τ
= 2DT/ [1.3·BV·Z
R
4
τ
4
R
4
av
4
1.0E-02
·f
τ
C
= P
τ
0.01
Ri (°C/W)
0.02028
0.29406
0.49179
0.24336
D (ave)
av
IRLR/U3636PbF
) = DT/ Z
·t
th
av
]
0.001393
0.00725
0.000011
0.000158
τi (sec)
jmax
thJC
jmax
is not exceeded.
1.0E-01
(assumed as
0.1
5