IRFH5302DTR2PBF International Rectifier, IRFH5302DTR2PBF Datasheet - Page 3

MOSFET N-CH 30V 29A 8VQFN

IRFH5302DTR2PBF

Manufacturer Part Number
IRFH5302DTR2PBF
Description
MOSFET N-CH 30V 29A 8VQFN
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFH5302DTR2PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.5 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
29A
Vgs(th) (max) @ Id
2.35V @ 100µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3635pF @ 25V
Power - Max
3.6W
Mounting Type
Surface Mount
Package / Case
8-VQFN
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.7 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
29 A
Power Dissipation
3.6 W
Gate Charge Qg
26 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH5302DTR2PBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFH5302DTR2PBF
Manufacturer:
IR
Quantity:
20 000
www.irf.com
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
100000
10000
1000
1000
1000
100
100
100
0.1
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
1
1
T J = 150°C
2.5V
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2
C rss
C oss
C iss
1
3
T J = 25°C
f = 1 MHZ
≤ 60µs PULSE WIDTH
Tj = 25°C
V DS = 15V
≤60µs PULSE WIDTH
10
4
10
TOP
BOTTOM
5
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
100
100
6
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
1000
100
14.0
12.0
10.0
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
0.0
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0
I D = 50A
V GS = 10V
I D = 50A
2.5V
V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
V DS = 24V
V DS = 15V
V DS = 6.0V
Q G , Total Gate Charge (nC)
20
1
≤ 60µs PULSE WIDTH
Tj = 150°C
40
10
TOP
BOTTOM
60
VGS
10V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
2.5V
100
80
3

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