IRF6604 International Rectifier, IRF6604 Datasheet - Page 4

• Manufacturer Part Number: IRF6604
• Description: MOSFET N-CH 30V 12A DIRECTFET
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6604

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.5 mOhm @ 12A, 7V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 2.1V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2270pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: DirectFET™ Isometric MQ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: IRF6604TR

10000
4
1000
100
0.1
100
10
1
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150
Drain-to-Source Voltage
J
V
SD
Coss
Crss
V DS , Drain-to-Source Voltage (V)
Ciss
,Source-to-Drain Voltage (V)
0.5
°
Forward Voltage
C
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
T = 25
J
1.0
10
°
C
f = 1 MHZ
1.5
V
GS
= 0 V
SHORTED
2.0
100
1000
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100
0.1
10
1
Fig 8. Maximum Safe Operating Area
0
Fig 6. Typical Gate Charge Vs.
0
I D = 9.6A
Tc = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-toSource Voltage (V)
5
Q G Total Gate Charge (nC)
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
V DS = 15V
10
10
15
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10msec
100µsec
1msec
100
20
1000
25