IRF640NSTRLPBF International Rectifier, IRF640NSTRLPBF Datasheet - Page 5

• Manufacturer Part Number: IRF640NSTRLPBF
• Description: MOSFET N-CH 200V 18A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF640NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 67nC @ 10V
• Input Capacitance (ciss) @ Vds: 1160pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 18A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 150mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 150 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 44.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF640NSTRLPBF; IRF640NSTRLPBFTR

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20
16
12
8
4
0
0.01
20
16
12
25
0.1
10
0.00001
8
4
0
1
25
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
50
C
T , Case Temperature ( C)
C
75
75
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
100
125
125
°
150
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
175
V
V
90%
90%
10%
10%
V
V
0.01
DS
DS
GS
GS
1. Duty factor D = t / t
2. Peak T = P
t
t
Notes:
d(on)
d(on)
≤ 0.1 %
≤ 0.1 %
≤ 1
≤ 1
t
t
r
r
J
IRF640N/S/LPbF
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
t
d(off)
d(off)
C
t
1
t
t
t
2
f
f
+
-
5
1