IRFI530NPBF International Rectifier, IRFI530NPBF Datasheet - Page 7
![MOSFET N-CH 100V 12A TO220FP](/photos/5/40/54079/to-220ab_sml.jpg)
IRFI530NPBF
Manufacturer Part Number
IRFI530NPBF
Description
MOSFET N-CH 100V 12A TO220FP
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRFI530NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 6.6A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
41W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Current, Drain
12 A
Gate Charge, Total
44 nC
Package Type
TO-220 Full-Pak
Polarization
N-Channel
Power Dissipation
41 W
Resistance, Drain To Source On
0.11 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
37 ns
Time, Turn-on Delay
6.4 ns
Transconductance, Forward
6.4 S
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 V
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11 A
Mounting Style
Through Hole
Gate Charge Qg
29.3 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFI530NPBF
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-