IRF1010ESTRLPBF International Rectifier, IRF1010ESTRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF1010ESTRLPBF
• Description: MOSFET N-CH 60V 84A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010ESTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 84A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 200W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 84A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 83 A
• Power Dissipation: 170 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 86.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1010ESTRLPBF; IRF1010ESTRLPBFTR

IRF1010ES/IRF1010EL
Fig 13a. Basic Gate Charge Waveform
6
Fig 12a. Unclamped Inductive Test Circuit
V
Fig 12b. Unclamped Inductive Waveforms
GS
V
I
G
A S
Q
R G
2 0 V
V
GS
V D S
GS
t p
I A S
Charge
Q
Q
D .U .T
GD
G
t p
0 .0 1
L
1 5V
V
(B R )D SS
D R IV E R
+
- V D D
A
800
600
400
200
0
25
Fig 12c. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit
Starting T , Junction Temperature ( C)
50
12V
V
GS
J
Same Type as D.U.T.
Vs. Drain Current
75
Current Regulator
.2 F
100
50K
3mA
Current Sampling Resistors
.3 F

I
125
G
TOP
BOTTOM
www.irf.com
D.U.T.
150
I
D
°
I D
20A
35A
50A
175
+
-
V
DS