IRF6621TR1PBF International Rectifier, IRF6621TR1PBF Datasheet

MOSFET N-CH 30V 12A DIRECTFET

IRF6621TR1PBF

Manufacturer Part Number
IRF6621TR1PBF
Description
MOSFET N-CH 30V 12A DIRECTFET
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF6621TR1PBF.pdf (10 pages)

Specifications of IRF6621TR1PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9.1 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
17.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
1460pF @ 15V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric SQ
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.1 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
12 A
Power Dissipation
42 W
Gate Charge Qg
11.7 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF6621TR1PBFTR
Description
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6621PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6621PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

‚
ƒ
l
l
l
l
l
l
l
l
Notes:
www.irf.com
Absolute Maximum Ratings
V
V
I
I
I
I
E
I
D
D
D
DM
AR
DS
GS
AS
RoHS Compliant 
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses and Switching Losses
Low Profile (<0.7mm)
Dual Sided Cooling Compatible 
Compatible with existing Surface Mount Techniques 
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
@ T
@ T
@ T
SQ
A
A
C
= 25°C
= 70°C
= 25°C
25
20
15
10
5
2.0
Fig 1. Typical On-Resistance Vs. Gate Voltage
SX
V GS , Gate-to-Source Voltage (V)
T J = 25°C
4.0
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
ST
6.0
T J = 125°C
Ãg
8.0
I D = 12A
g
Parameter
GS
GS
GS
MQ
10.0
@ 10V
@ 10V
@ 10V
h
f
MX
„
…
†
11.7nC
30V max ±20V max 7.0mΩ@ 10V 9.3mΩ@ 4.5V
Q
T
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
V
C
g tot
DSS
measured with thermocouple mounted to top (Drain) of part.
MT
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
12
10

J
8
6
4
2
0
4.2nC
= 25°C, L = 0.29mH, R
Q
0
gd
I D = 9.6A
V
GS
DirectFET™ Power MOSFET ‚
MP
4
SQ
1.0nC
Q G Total Gate Charge (nC)
Q
gs2
8
Max.
±20
9.6
9.6
30
12
55
96
13
V DS = 24V
VDS= 15V
IRF6621TRPbF
R
12
DS(on)
G
10nC
Q
= 25Ω, I
IRF6621PbF
16
rr
DirectFET™ ISOMETRIC
TM
packaging to achieve
AS
20
6.9nC
Q
= 9.6A.
oss
24
R
DS(on)
Units
V
mJ
1.8V
28
V
A
A
gs(th)
1
5/24/06

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IRF6621TR1PBF Summary of contents

Page 1

RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation D A Power Dissipation 25° Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

PULSE WIDTH 2. 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 150° 25° -40°C 10 ...

Page 5

150° 25°C 100 -40° 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage ...

Page 6

Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit Pulse Width < 1µs Duty Factor < 0.1% ...

Page 7

D.U.T + ƒ • • - • + ‚ -  R • • • SD • Fig 18. DirectFET™ Substrate and PCB Layout, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking 8 DIMENSIONS METRIC IMPERIAL CODE ...

Page 9

... DirectFET™ Tape & Reel Dimension (Showing component orientation). NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6621TRPBF). For 1000 parts on 7" reel, order IRF6621TR1PBF CODE WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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