IRLIB9343PBF International Rectifier, IRLIB9343PBF Datasheet - Page 2

• Manufacturer Part Number: IRLIB9343PBF
• Description: MOSFET P-CH 55V 14A TO220FP
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRLIB9343PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 105 mOhm @ 3.4A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 50V
• Power - Max: 33W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 170 mOhms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 14 A
• Power Dissipation: 33 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 9.5 ns
• Gate Charge Qg: 31 nC
• Minimum Operating Temperature: - 40 C
• Rise Time: 24 ns
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.105Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -40C to 175C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB Full-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRLIB9343PBF

Electrical Characteristics @ T
BV
∆ΒV
R
V
∆V
I
I
g
Q
Q
Q
Q
t
t
t
t
C
C
C
C
L
L
Avalanche Characteristics
E
I
E
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
fs
D
S
GS(th)
AS
AR
SD
DS(on)
iss
oss
rss
oss
g
gs
gd
godr
rr
@ T
2
GS(th)
DSS
DSS
C
/∆T
/∆T
= 25°C Continuous Source Current
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
Ãg
J
= 25°C (unless otherwise specified)
g
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-55
5.3
–––
150
–––
-3.7
–––
–––
–––
–––
–––
660
160
280
–––
–––
–––
120
-52
7.1
8.5
9.5
9.5
4.5
7.5
93
31
15
24
21
72
57
-100
-2.0
Typ.
See Fig. 14, 15, 17a, 17b
-1.2
–––
–––
105
170
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
180
-25
-14
-60
47
86
mV/°C
mV/°C
mΩ
µA
nA
nH
nC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
See Fig. 6 and 19
V
I
R
V
V
ƒ = 1.0MHz,
V
Between lead,
6mm (0.25in.)
from package
and center of die contact
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
G
= -14A
= -14A
= 25°C, I
= 25°C, I
= 2.5Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -55V, V
= -55V, V
= -20V
= 20V
= -25V, I
= -44V
= -10V
= -28V, V
= 0V
= -50V
= 0V, V
GS
Max.
190
, I
D
Conditions
D
Conditions
S
F
DS
= -250µA
D
D
= -14A, V
= -14A
D
= -250µA
GS
GS
GS
= 0V to -44V
= -14A
= -3.4A
= -2.7A
e
= 0V
= 0V, T
= -10V
See Fig.5
D
www.irf.com
= -1mA
e
GS
e
Ãe
J
= 125°C
G
= 0V
Units
mJ
mJ
A
e
S
D