IRLZ24NPBF International Rectifier, IRLZ24NPBF Datasheet - Page 2
![MOSFET N-CH 55V 18A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRLZ24NPBF
Manufacturer Part Number
IRLZ24NPBF
Description
MOSFET N-CH 55V 18A TO-220AB
Manufacturer
International Rectifier
Series
HEXFET®r
Specifications of IRLZ24NPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
60 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
480pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Current, Drain
18 A
Gate Charge, Total
15 nC
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
45 W
Resistance, Drain To Source On
0.06 Ohm
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
20 ns
Time, Turn-on Delay
7.1 ns
Transconductance, Forward
8.3 S
Voltage, Breakdown, Drain To Source
55 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±16 V
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
105 mOhms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
16 V
Continuous Drain Current
18 A
Mounting Style
Through Hole
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRLZ24NPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRLZ24NPBF
Manufacturer:
SAMSUNG
Quantity:
1 600
Part Number:
IRLZ24NPBF
Manufacturer:
IR墨西哥
Quantity:
20 000
2
www.irf.com