IRLU8743PBF International Rectifier, IRLU8743PBF Datasheet - Page 5

• Manufacturer Part Number: IRLU8743PBF
• Description: MOSFET N-CH 30V 160A I-PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLU8743PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 2.35V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4880pF @ 15V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.9 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 160 A
• Power Dissipation: 135 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 39 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
180
160
140
120
100
10
80
60
40
20
1E-006
1
Fig 9. Maximum Drain Current vs.
0
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.01
50
0.20
0.10
0.02
0.05
T C , Case Temperature (°C)
75
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
Limited By Package
100
125
t 1 , Rectangular Pulse Duration (sec)
150
0.0001
175
τ
J
τ
J
τ
1
Ci= τi/Ri
Fig 10. Threshold Voltage vs. Temperature
τ
1
Ci
2.5
2.0
1.5
1.0
0.5
i/Ri
R
1
R
-75 -50 -25 0
1
0.001
τ
2
τ
R
2
2
R
IRLR/U8743PbF
2
I D = 100µA
R
τ
3
3
R
T J , Temperature ( °C )
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25 50 75 100 125 150 175 200
τ
R
4
τ
4
R
4
4
τ
C
τ
Ri (°C/W) τi (sec)
0.01
0.02879
0.25773
0.48255
0.34135
0.001411
0.010617
0.000017
0.000143
5
0.1