IRFZ34NPBF International Rectifier, IRFZ34NPBF Datasheet - Page 6

• Manufacturer Part Number: IRFZ34NPBF
• Description: MOSFET N-CH 55V 29A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFZ34NPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 700pF @ 25V
• Power - Max: 68W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.04Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 29A
• Power Dissipation: 68W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Current, Drain: 29 A
• Gate Charge, Total: 34 nC
• Polarization: N-Channel
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +175 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 31 ns
• Time, Turn-on Delay: 7 ns
• Transconductance, Forward: 6.5 S
• Voltage, Breakdown, Drain To Source: 55 V
• Voltage, Forward, Diode: 1.6 V
• Voltage, Gate To Source: ±20 V
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 26 A
• Mounting Style: Through Hole
• Gate Charge Qg: 22.7 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRFZ34NPBF

IRFZ34NPbF
6
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
Fig 13a. Basic Gate Charge Waveform
10 V
V
V
I
G
AS
DS
Q
GS
10 V
R
G
V
t
DS
p
Charge
Q
Q
GD
G
t
p
I
D.U.T.
AS
L
0.01Ω
V
(BR)DSS
V
+
-
V
DD
DD
140
120
100
80
60
40
20
Fig 12c. Maximum Avalanche Energy
0
12V
Fig 13b. Gate Charge Test Circuit
25
V
V
GS
DD
Starting T , Junction Temperature (°C)
Same Type as D.U.T.
= 25V
Current Regulator
50
.2µF
Vs. Drain Current
50KΩ
3mA
J
75
Current Sampling Resistors
.3µF
I
G
100
D.U.T.
125
I
D
TOP
BOTTOM
www.irf.com
+
-
150
V
DS
11A
6.5A
16A
I
D
175
A